BSM180D12P2C101 (In Stock:1)

FET, MOSFET Arrays
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
BSM180D12P2C101
289-BSM180D12P2C101
SIC 2N-CH 1200V 204A MODULE

BSM180D12P2C101 Description

Mosfet Array 1200V (1.2kV) 204A (Tc) 1130W Module

Technical specifications

Operating Temperature-40°C ~ 150°C (TJ)
FET Feature-
Configuration2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs-
ECCNEAR99
Product StatusActive
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 35.2mA
Supplier Device PackageModule
Drain to Source Voltage (Vdss)1200V (1.2kV)
Series-
Package / CaseModule
TechnologySilicon Carbide (SiC)
Power - Max1130W
REACH StatusREACH Unaffected
MfrRohm Semiconductor
Current - Continuous Drain (Id) @ 25°C204A (Tc)
HTSUS8541.29.0095
PackageBulk
RoHS StatusROHS3 Compliant
Base Product NumberBSM180
Moisture Sensitivity Level (MSL)1 (Unlimited)

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