EMF7T2R

Bipolar Transistor Arrays, Pre-Biased
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Mfr. Part #:
onzuu Part #:
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Description:
EMF7T2R
293-EMF7T2R
TRANS DIGITAL BJT NPN 12V 500MA/

EMF7T2R Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6

Technical specifications

Frequency - Transition250MHz, 320MHz
Current - Collector (Ic) (Max)100mA, 500mA
Resistor - Base (R1)2.2kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Mounting TypeSurface Mount
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Supplier Device PackageEMT6
Series-
Transistor Type1 NPN Pre-Biased, 1 NPN
Package / CaseSOT-563, SOT-666
Power - Max150mW
REACH StatusREACH Unaffected
MfrRohm Semiconductor
Resistor - Emitter Base (R2)2.2kOhms
Current - Collector Cutoff (Max)500nA, 100nA (ICBO)
PackageTape & Reel (TR)
RoHS StatusROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20mA, 5V / 270 @ 10mA, 2V
Base Product NumberEMF7

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