IMH21T110

Bipolar Transistor Arrays, Pre-Biased
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IMH21T110
293-IMH21T110
TRANS PREBIAS DUAL NPN SMT6

IMH21T110 Description

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 20V 600mA 150MHz 300mW Surface Mount SMT6

Technical specifications

Frequency - Transition150MHz
Current - Collector (Ic) (Max)600mA
Resistor - Base (R1)10kOhms
Vce Saturation (Max) @ Ib, Ic150mV @ 2.5mA, 50mA
ECCNEAR99
Mounting TypeSurface Mount
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)20V
Supplier Device PackageSMT6
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Package / CaseSC-74, SOT-457
Power - Max300mW
REACH StatusREACH Unaffected
MfrRohm Semiconductor
Resistor - Emitter Base (R2)-
Current - Collector Cutoff (Max)500nA (ICBO)
HTSUS8541.21.0095
PackageTape & Reel (TR)
RoHS StatusROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce820 @ 50mA, 5V
Base Product NumberIMH21
Moisture Sensitivity Level (MSL)1 (Unlimited)

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