SCT2160KEGC11 (In Stock:11)

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
SCT2160KEGC11
278-SCT2160KEGC11
1200V, 22A, THD, SILICON-CARBIDE
1+:$12.38039
10+:$10.72633
30+:$9.71630
InStock Quantity: 11

SCT2160KEGC11 Description

N-Channel 1200 V 22A (Tc) 165W (Tc) Through Hole TO-247N

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs62 nC @ 18 V
Product StatusActive
Supplier Device PackageTO-247N
Drain to Source Voltage (Vdss)1200 V
Power Dissipation (Max)165W (Tc)
Package / CaseTO-247-3
TechnologySiCFET (Silicon Carbide)
REACH StatusREACH Unaffected
MfrRohm Semiconductor
Vgs (Max)+22V, -6V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature175°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs208mOhm @ 7A, 18V
Vgs(th) (Max) @ Id4V @ 2.5mA
Series-
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
HTSUS8541.29.0095
PackageTube
Base Product NumberSCT2160

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