| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 800 V | |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 18 V | |
| Product Status | Active | |
| Supplier Device Package | TO-247N | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Power Dissipation (Max) | 165W (Tc) | |
| Package / Case | TO-247-3 | |
| Technology | SiCFET (Silicon Carbide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Rohm Semiconductor | |
| Vgs (Max) | +22V, -6V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | 175°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Rds On (Max) @ Id, Vgs | 208mOhm @ 7A, 18V | |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Base Product Number | SCT2160 |
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