| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 500 V | |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18 V | |
| Product Status | Active | |
| Supplier Device Package | TO-263-7 | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Power Dissipation (Max) | 159W | |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| Technology | SiCFET (Silicon Carbide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Rohm Semiconductor | |
| Vgs (Max) | +22V, -4V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | 175°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V | |
| Vgs(th) (Max) @ Id | 5.6V @ 6.67mA | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| Base Product Number | SCT3060 |
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