SLA5064 (In Stock:148)

FET, MOSFET Arrays
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Mfr. Part #:
onzuu Part #:
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Description:

SLA5064 Description

Mosfet Array 60V 10A 5W Through Hole 12-SIP

Technical specifications

Configuration3 N and 3 P-Channel (3-Phase Bridge)
Typical Turn-Off Delay Time (ns)180@P Channel|90@N Channel
Input Capacitance (Ciss) (Max) @ Vds460pF @ 10V, 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs-
Typical Rise Time (ns)110@N Channel|170@P Channel
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)25@N Channel|50@P Channel
Product StatusActive
AutomotiveNo
Drain to Source Voltage (Vdss)60V
Supplier PackageSIP
Package / Case12-SIP Exposed Tab
TechnologyMOSFET (Metal Oxide)
Channel TypeN|P
EU RoHSCompliant with Exemption
Maximum Continuous Drain Current (A)10
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature150°C (TJ)
Maximum Drain Source Voltage (V)60
Maximum Drain Source Resistance (mOhm)140@10V@P Channel|140@4V@N Channel
ECCNEAR99
Mounting TypeThrough Hole
Standard Package NameSIP
Rds On (Max) @ Id, Vgs140mOhm @ 5A, 4V
Vgs(th) (Max) @ Id-
Pin Count12
MountingThrough Hole
Lead ShapeThrough Hole
Current - Continuous Drain (Id) @ 25°C10A
HTSUS8541.29.0095
PackageBulk
Typical Input Capacitance @ Vds (pF)1200@10V@P Channel|460@10V@N Channel
CategoryPower MOSFET
PCB changed12
Number of Elements per Chip3
ECCN (US)EAR99
Maximum Power Dissipation (mW)5000
Supplier Device Package12-SIP
Minimum Operating Temperature (°C)-40
Maximum Operating Temperature (°C)150
Typical Fall Time (ns)100@P Channel|55@N Channel
Package Height16
MfrSanken Electric USA Inc.
RoHS StatusROHS3 Compliant
FET FeatureLogic Level Gate
Maximum Gate Source Voltage (V)±20
Package Length31.5(Max)
Series-
TabTab
Power - Max5W
Part StatusActive
Package Width4.8
Base Product NumberSLA50

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