2N1711

Single Bipolar Transistors
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2N1711 Description

Bipolar (BJT) Transistor NPN 50 V 500 mA 100MHz 800 mW Through Hole TO-39

Technical specifications

Operating Temperature175°C (TJ)
Frequency - Transition100MHz
Current - Collector (Ic) (Max)500 mA
Vce Saturation (Max) @ Ib, Ic1.5V @ 15mA, 150mA
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Voltage - Collector Emitter Breakdown (Max)50 V
Supplier Device PackageTO-39
Series-
Transistor TypeNPN
Package / CaseTO-205AD, TO-39-3 Metal Can
Power - Max800 mW
REACH StatusREACH Unaffected
MfrSTMicroelectronics
Current - Collector Cutoff (Max)10nA (ICBO)
HTSUS8541.21.0075
PackageTube
RoHS StatusROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 100mA, 10V
Base Product Number2N17
Moisture Sensitivity Level (MSL)1 (Unlimited)

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