| Operating Temperature | -55°C ~ 175°C (TJ) | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 3880 pF @ 600 V | |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 18 V | |
| Grade | Automotive | |
| Mounting Type | Surface Mount | |
| Product Status | Active | |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 60A, 18V | |
| Vgs(th) (Max) @ Id | 4.2V @ 10mA | |
| Supplier Device Package | H2PAK-7 | |
| Drain to Source Voltage (Vdss) | 900 V | |
| Series | - | |
| Power Dissipation (Max) | 625W (Tc) | |
| Qualification | AEC-Q101 | |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| REACH Status | REACH Unaffected | |
| Mfr | STMicroelectronics | |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) | |
| Vgs (Max) | +18V, -5V | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Package | Tape & Reel (TR) | |
| RoHS Status | ROHS3 Compliant | 
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