SCTWA50N120

Single FETs, MOSFETs
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
SCTWA50N120
278-SCTWA50N120
SICFET N-CH 1200V 65A HIP247

SCTWA50N120 Description

N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs122 nC @ 20 V
Product StatusActive
Supplier Device PackageHiP247™
Drain to Source Voltage (Vdss)1200 V
Power Dissipation (Max)318W (Tc)
Package / CaseTO-247-3
TechnologySiCFET (Silicon Carbide)
REACH StatusREACH Unaffected
MfrSTMicroelectronics
Vgs (Max)+25V, -10V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 200°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id3V @ 1mA
Series-
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
HTSUS8541.29.0095
PackageTube
Base Product NumberSCTWA50

Shopping Guide

Easy Shopping, Convenient Payment, Fast Delivery

Payment Methods

We support multiple payment methods:

  • paypal
  • visa
  • amex
  • oo

Customers are responsible for shipping costs, bank charges, customs duties and taxes.

Dispatch Time

Shipments are made once a day around 5pm, excluding Sundays.

Estimated Delivery

Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.

Delivery Methods

We provide the following international delivery services:

  • FedEX
  • DHL
  • UPS
  • TNT

If you have any questions, please contact our customer service team for assistance