Unit Weight | 0.068784 oz | |
Configuration | Single | |
Typical Turn-Off Delay Time (ns) | 30 | |
Id - Continuous Drain Current | 11 A | |
Maximum Gate Source Leakage Current (nA) | 1000 | |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
Typical Rise Time (ns) | 8 | |
PPAP | No | |
Channel Mode | Enhancement | |
Typical Turn-On Delay Time (ns) | 3 | |
Fall Time | 10 ns | |
Product Status | Active | |
RoHS | RoHS Compliant By Exemption | |
Automotive | No | |
Drain to Source Voltage (Vdss) | 600 V | |
Tradename | MDmesh | |
Supplier Package | TO-220FP | |
Maximum IDSS (uA) | 1 | |
Transistor Type | 1 N-Channel | |
Package / Case | TO-220-3 Full Pack | |
Number of Channels | 1 Channel | |
Typical Turn-On Delay Time | 3 ns | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Channel Type | N | |
EU RoHS | Compliant with Exemption | |
Rds On - Drain-Source Resistance | 360 mOhms | |
Maximum Continuous Drain Current (A) | 11 | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Maximum Drain Source Voltage (V) | 600 | |
Maximum Drain Source Resistance (mOhm) | 360@10V | |
ECCN | EAR99 | |
Supplier Temperature Grade | Industrial | |
Mounting Type | Through Hole | |
Standard Package Name | TO | |
Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Pin Count | 3 | |
Mounting | Through Hole | |
Rise Time | 8 ns | |
Lead Shape | Through Hole | |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
SVHC | Yes | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Vgs th - Gate-Source Threshold Voltage | 2 V | |
HTSUS | 8541.29.0095 | |
Package | Tube | |
USHTS | 8541290095 | |
Typical Gate Charge @ Vgs (nC) | 27@10V | |
Typical Input Capacitance @ Vds (pF) | 790@50V | |
Category | Power MOSFET | |
PCB changed | 3 | |
HTS | COMPONENTS | |
FET Type | N-Channel | |
Number of Elements per Chip | 1 | |
ECCN (US) | EAR99 | |
Maximum Power Dissipation (mW) | 25000 | |
Qg - Gate Charge | 27 nC | |
Supplier Device Package | TO-220FP | |
Minimum Operating Temperature (°C) | -55 | |
Maximum Operating Temperature (°C) | 150 | |
Power Dissipation (Max) | 25W (Tc) | |
Typical Fall Time (ns) | 10 | |
Process Technology | MDmesh | |
Package Height | 16.4(Max) | |
Mfr | STMicroelectronics | |
Vgs (Max) | ±25V | |
Maximum Operating Temperature | + 150 C | |
RoHS Status | ROHS3 Compliant | |
Mounting Style | Through Hole | |
FET Feature | - | |
Maximum Gate Source Voltage (V) | ±25 | |
SVHC Exceeds Threshold | Yes | |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | |
Typical Turn-Off Delay Time | 30 ns | |
Transistor Polarity | N-Channel | |
Package Length | 10.4(Max) | |
Typical Gate Charge @ 10V (nC) | 27 | |
Minimum Operating Temperature | - 55 C | |
Vds - Drain-Source Breakdown Voltage | 600 V | |
Series | MDmesh™ II | |
Tab | Tab | |
Part Status | Active | |
Maximum Gate Threshold Voltage (V) | 4 | |
Package Width | 4.6(Max) | |
Pd - Power Dissipation | 25 W | |
Base Product Number | STF13 |
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