STF13NM60N (In Stock:1157)

Single FETs, MOSFETs
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onzuu Part #:
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Description:
STF13NM60N
278-STF13NM60N
MOSFET N-CH 600V 11A TO220FP

STF13NM60N Description

STF13NM60N is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems. ### Description: The STF13NM60N is an N-channel enhancement mode field-effect transistor (FET) that features a high voltage rating of 600 volts and a continuous drain current (Id) of 13 amperes. It is available in a TO-220AB package, which is a popular and compact package for power transistors. ### Features: Some of the key features of the STF13NM60N include: 1. High voltage rating: The STF13NM60N has a high voltage rating of 600 volts, making it suitable for use in high voltage applications. 2. High current capability: The transistor can handle a continuous drain current of up to 13 amperes, making it suitable for use in high current applications. 3. Low on-state resistance (RDS(on)): The STF13NM60N has a low on-state resistance, which helps to minimize power dissipation and improve efficiency in power electronic applications. 4. High switching speed: The transistor has a fast switching speed, which makes it suitable for use in high frequency applications. 5. Built-in protection features: The STF13NM60N includes built-in protection features such as over-voltage protection, over-current protection, and thermal shutdown to ensure reliable operation and prevent damage to the device. ### Applications: The STF13NM60N can be used in a variety of power electronic applications, including: 1. Motor control: The high voltage and current capabilities of the STF13NM60N make it suitable for use in motor control applications, such as in industrial machinery and automotive systems. 2. Power supplies: The STF13NM60N can be used in power supply applications, such as in switching power supplies and battery chargers. 3. Energy management systems: The transistor can be used in energy management systems, such as in solar power systems and energy storage systems. 4. Lighting applications: The STF13NM60N can be used in lighting applications, such as in LED drivers and ballast for fluorescent lamps. 5. Industrial control: The transistor can be used in industrial control applications, such as in conveyor systems and robotic systems. In summary, the STF13NM60N is a high voltage N-channel MOSFET transistor that offers high current capability, low on-state resistance, and fast switching speed. It is suitable for use in a variety of power electronic applications, including motor control, power supplies, energy management systems, lighting applications, and industrial control.

Technical specifications

Unit Weight0.068784 oz
ConfigurationSingle
Typical Turn-Off Delay Time (ns)30
Id - Continuous Drain Current11 A
Maximum Gate Source Leakage Current (nA)1000
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Typical Rise Time (ns)8
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)3
Fall Time10 ns
Product StatusActive
RoHSRoHS Compliant By Exemption
AutomotiveNo
Drain to Source Voltage (Vdss)600 V
TradenameMDmesh
Supplier PackageTO-220FP
Maximum IDSS (uA)1
Transistor Type1 N-Channel
Package / CaseTO-220-3 Full Pack
Number of Channels1 Channel
Typical Turn-On Delay Time3 ns
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant with Exemption
Rds On - Drain-Source Resistance360 mOhms
Maximum Continuous Drain Current (A)11
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)600
Maximum Drain Source Resistance (mOhm)360@10V
ECCNEAR99
Supplier Temperature GradeIndustrial
Mounting TypeThrough Hole
Standard Package NameTO
Rds On (Max) @ Id, Vgs360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Pin Count3
MountingThrough Hole
Rise Time8 ns
Lead ShapeThrough Hole
Current - Continuous Drain (Id) @ 25°C11A (Tc)
SVHCYes
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs th - Gate-Source Threshold Voltage2 V
HTSUS8541.29.0095
PackageTube
USHTS8541290095
Typical Gate Charge @ Vgs (nC)27@10V
Typical Input Capacitance @ Vds (pF)790@50V
CategoryPower MOSFET
PCB changed3
HTSCOMPONENTS
FET TypeN-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)25000
Qg - Gate Charge27 nC
Supplier Device PackageTO-220FP
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)25W (Tc)
Typical Fall Time (ns)10
Process TechnologyMDmesh
Package Height16.4(Max)
MfrSTMicroelectronics
Vgs (Max)±25V
Maximum Operating Temperature+ 150 C
RoHS StatusROHS3 Compliant
Mounting StyleThrough Hole
FET Feature-
Maximum Gate Source Voltage (V)±25
SVHC Exceeds ThresholdYes
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-Off Delay Time30 ns
Transistor PolarityN-Channel
Package Length10.4(Max)
Typical Gate Charge @ 10V (nC)27
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage600 V
SeriesMDmesh™ II
TabTab
Part StatusActive
Maximum Gate Threshold Voltage (V)4
Package Width4.6(Max)
Pd - Power Dissipation25 W
Base Product NumberSTF13

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