STGF19NC60KD (In Stock:2452)

Single IGBTs
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STGF19NC60KD
279-STGF19NC60KD
IGBT 600V 16A 32W TO220FP

STGF19NC60KD Description

The STGF19NC60KD is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including power electronics and motor control. ### Description: The STGF19NC60KD is a high voltage N-channel MOSFET transistor that features a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 19A. It has a low on-state resistance (RDS(on)) of 60mΩ, which allows for efficient power dissipation and reduced power loss. The device also has a fast switching speed, which makes it suitable for use in high-frequency applications. ### Features: - High voltage N-channel MOSFET transistor - Drain-source voltage (VDS) of 600V - Continuous drain current (ID) of 19A - Low on-state resistance (RDS(on)) of 60mΩ - Fast switching speed ### Applications: The STGF19NC60KD is suitable for a wide range of applications, including: - Power electronics - Motor control - Inverters - Switch mode power supplies (SMPS) - Battery management systems - Industrial control systems - Renewable energy systems In summary, the STGF19NC60KD is a high voltage N-channel MOSFET transistor that offers high performance and efficiency in a variety of applications. Its low on-state resistance and fast switching speed make it an ideal choice for power electronics and motor control applications.

Technical specifications

Unit Weight0.081130 oz
ConfigurationSingle
PPAPNo
Product StatusActive
Voltage - Collector Emitter Breakdown (Max)600 V
RoHSRoHS Compliant
AutomotiveNo
Supplier PackageTO-220FP
Package / CaseTO-220-3 Full Pack
TechnologySi
Continuous Collector Current Ic Max16 A
Typical Collector Emitter Saturation Voltage (V)2
REACH StatusREACH Unaffected
Channel TypeN
Maximum Gate Emitter Voltage (V)±20
EU RoHSCompliant with Exemption
IGBT Type-
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
Test Condition480V, 12A, 10Ohm, 15V
Current - Collector (Ic) (Max)16 A
ECCNEAR99
Supplier Temperature GradeIndustrial
Mounting TypeThrough Hole
Standard Package NameTO
Pin Count3
Current - Collector Pulsed (Icm)75 A
MountingThrough Hole
Maximum Gate Emitter Leakage Current (uA)0.1
Gate Charge55 nC
Lead ShapeThrough Hole
Collector- Emitter Voltage VCEO Max600 V
SVHCYes
HTSUS8541.29.0095
PackageTube
USHTS8541290095
Maximum Gate Emitter Voltage- 20 V, 20 V
Reverse Recovery Time (trr)31 ns
PCB changed3
HTSEA
Maximum Collector-Emitter Voltage (V)600
ECCN (US)EAR99
Maximum Power Dissipation (mW)32
Td (on/off) @ 25°C30ns/105ns
Supplier Device PackageTO-220FP
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Package Height16.4(Max)
Collector-Emitter Saturation Voltage2 V
MfrSTMicroelectronics
Continuous Collector Current at 25 C35 A
Height9.3 mm
Maximum Operating Temperature+ 150 C
Width4.6 mm
RoHS StatusROHS3 Compliant
Mounting StyleThrough Hole
Input TypeStandard
Switching Energy165µJ (on), 255µJ (off)
Maximum Continuous Collector Current (A)16
SVHC Exceeds ThresholdYes
Gate-Emitter Leakage Current100 nA
Package Length10.4(Max)
Minimum Operating Temperature- 55 C
SeriesPowerMESH™
Vce(on) (Max) @ Vge, Ic2.75V @ 15V, 12A
TabTab
Length10.4 mm
Power - Max32 W
Part StatusActive
Package Width4.6(Max)
Pd - Power Dissipation32 W
Base Product NumberSTGF19

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