STW15NK90Z (In Stock:807)

Single FETs, MOSFETs
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STW15NK90Z
278-STW15NK90Z
MOSFET N-CH 900V 15A TO247-3

STW15NK90Z Description

STW15NK90Z is a wireless transceiver chip manufactured by STMicroelectronics. It is designed for use in Zigbee and RF4CE applications, which are communication protocols used in home automation and remote control devices. ### Description: The STW15NK90Z is a highly integrated, low-power transceiver that operates in the 2.4 GHz ISM band. It is based on a proprietary CMOS technology and is designed to meet the stringent requirements of Zigbee and RF4CE applications. The chip features a high level of integration, which allows it to be used in compact and power-sensitive devices. ### Features: Some of the key features of the STW15NK90Z include: 1. Highly integrated: The chip integrates a 2.4 GHz transceiver, a microcontroller, and a rich set of peripherals, which reduces the number of external components required and saves board space. 2. Low power consumption: The STW15NK90Z is designed to operate with low power consumption, which is essential for battery-powered devices. 3. Zigbee and RF4CE compatible: The chip is compatible with both Zigbee and RF4CE communication protocols, making it suitable for a wide range of home automation and remote control applications. 4. Secure communication: The STW15NK90Z features advanced security features, including AES-128 encryption, to ensure secure communication between devices. 5. Flexible configuration: The chip can be easily configured to meet the specific requirements of different applications, thanks to its flexible and programmable architecture. ### Applications: The STW15NK90Z is suitable for a wide range of applications, including: 1. Home automation: The chip can be used in home automation systems to control smart devices such as lights, thermostats, and security systems. 2. Remote controls: The STW15NK90Z can be used in remote controls for home entertainment systems, such as TVs, stereos, and gaming consoles. 3. Wireless sensors: The chip can be used in wireless sensors for monitoring temperature, humidity, and other environmental parameters in smart homes and industrial applications. 4. Healthcare devices: The STW15NK90Z can be used in wireless healthcare devices, such as blood glucose monitors and heart rate monitors, to transmit data to a central monitoring system. 5. Smart energy management: The chip can be used in smart energy management systems to control and monitor energy consumption in homes and buildings. In summary, the STW15NK90Z is a highly integrated, low-power wireless transceiver chip that is designed for use in Zigbee and RF4CE applications. Its features, such as low power consumption, secure communication, and flexible configuration, make it suitable for a wide range of applications, including home automation, remote controls, wireless sensors, healthcare devices, and smart energy management systems.

Technical specifications

Unit Weight0.211644 oz
ConfigurationSingle
Typical Turn-Off Delay Time (ns)135
Id - Continuous Drain Current15 A
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs256 nC @ 10 V
Typical Rise Time (ns)27
PPAPNo
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)42
Fall Time35 ns
Product StatusActive
RoHSRoHS Compliant By Exemption
AutomotiveNo
Drain to Source Voltage (Vdss)900 V
Supplier PackageTO-247
Transistor Type1 N-Channel
Package / CaseTO-247-3
Number of Channels1 Channel
Typical Turn-On Delay Time42 ns
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Channel TypeN
EU RoHSCompliant with Exemption
Rds On - Drain-Source Resistance550 mOhms
Maximum Continuous Drain Current (A)15
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Drain Source Voltage (V)900
ECCNEAR99
Mounting TypeThrough Hole
Standard Package NameTO
Rds On (Max) @ Id, Vgs550mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 150µA
Pin Count3
MountingThrough Hole
Rise Time27 ns
Lead ShapeThrough Hole
Current - Continuous Drain (Id) @ 25°C15A (Tc)
SVHCYes
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs th - Gate-Source Threshold Voltage3 V
HTSUS8541.29.0095
PackageTube
Maximum Drain Source Resistance (MOhm)550@10V
USHTS8541290095
Typical Gate Charge @ Vgs (nC)190@10V
Typical Input Capacitance @ Vds (pF)6100@25V
CategoryPower MOSFET
PCB changed3
HTS8541.29.00.95
FET TypeN-Channel
Number of Elements per Chip1
ECCN (US)EAR99
Maximum Power Dissipation (mW)350000
Qg - Gate Charge190 nC
Supplier Device PackageTO-247-3
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Power Dissipation (Max)350W (Tc)
Typical Fall Time (ns)35
Process TechnologySuperMESH
Package Height20.15(Max)
MfrSTMicroelectronics
Vgs (Max)±30V
Height20.15 mm
Maximum Operating Temperature+ 150 C
Width5.15 mm
RoHS StatusROHS3 Compliant
Mounting StyleThrough Hole
FET Feature-
Maximum Gate Source Voltage (V)±30
SVHC Exceeds ThresholdYes
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-Off Delay Time135 ns
Transistor PolarityN-Channel
Package Length15.75(Max)
Typical Gate Charge @ 10V (nC)190
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage900 V
SeriesSuperMESH™
TypeMOSFET
TabTab
Length15.75 mm
Part StatusActive
Package Width5.15(Max)
Pd - Power Dissipation350 W
Base Product NumberSTW15

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