STW45NM50 (In Stock:1145)
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
STW45NM50
278-STW45NM50
MOSFET N-CH 500V 45A TO247-3
1+:$13.03095
10+:$12.61238
STW45NM50 Description
N-Channel 500 V 45A (Tc) 417W (Tc) Through Hole TO-247-3
Technical specifications
| Unit Weight | 0.211644 oz | |
| Configuration | Single | |
| Typical Turn-Off Delay Time (ns) | 21.6 | |
| Id - Continuous Drain Current | 45 A | |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V | |
| Typical Rise Time (ns) | 107.5 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 26.5 | |
| Fall Time | 87.7 ns | |
| Product Status | Active | |
| RoHS | RoHS Compliant By Exemption | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Tradename | MDmesh | |
| Supplier Package | TO-247 | |
| Transistor Type | 1 N-Channel | |
| Package / Case | TO-247-3 | |
| Number of Channels | 1 Channel | |
| Typical Turn-On Delay Time | 26.5 ns | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant with Exemption | |
| Rds On - Drain-Source Resistance | 100 mOhms | |
| Maximum Continuous Drain Current (A) | 45 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Maximum Drain Source Voltage (V) | 500 | |
| Maximum Drain Source Resistance (mOhm) | 100@10V | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 22.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Rise Time | 107.5 ns | |
| Lead Shape | Through Hole | |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) | |
| SVHC | Yes | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs th - Gate-Source Threshold Voltage | 3 V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| USHTS | 8541290095 | |
| Typical Gate Charge @ Vgs (nC) | 113@10V | |
| Typical Input Capacitance @ Vds (pF) | 3290@25V | |
| Category | Power MOSFET | |
| PCB changed | 3 | |
| HTS | COMPONENTS | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 417000 | |
| Qg - Gate Charge | 113 nC | |
| Supplier Device Package | TO-247-3 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 150 | |
| Power Dissipation (Max) | 417W (Tc) | |
| Typical Fall Time (ns) | 87.7 | |
| Process Technology | MDmesh | |
| Package Height | 20.15(Max) | |
| Mfr | STMicroelectronics | |
| Vgs (Max) | ±30V | |
| Height | 20.15 mm | |
| Maximum Operating Temperature | + 150 C | |
| Width | 5.15 mm | |
| RoHS Status | ROHS3 Compliant | |
| Mounting Style | Through Hole | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±30 | |
| SVHC Exceeds Threshold | Yes | |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
| Typical Turn-Off Delay Time | 21.6 ns | |
| Transistor Polarity | N-Channel | |
| Package Length | 15.75(Max) | |
| Typical Gate Charge @ 10V (nC) | 113 | |
| Minimum Operating Temperature | - 65 C | |
| Vds - Drain-Source Breakdown Voltage | 500 V | |
| Series | MDmesh™ | |
| Tab | Tab | |
| Length | 15.75 mm | |
| Part Status | Active | |
| Package Width | 5.15(Max) | |
| Pd - Power Dissipation | 417 W | |
| Base Product Number | STW45 |
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