STX817A

Single Bipolar Transistors
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STX817A Description

Bipolar (BJT) Transistor PNP 80 V 1.5 A 50MHz 900 mW Through Hole TO-92-3

Technical specifications

Operating Temperature150°C (TJ)
Frequency - Transition50MHz
Current - Collector (Ic) (Max)1.5 A
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
ECCNEAR99
Mounting TypeThrough Hole
Product StatusObsolete
Voltage - Collector Emitter Breakdown (Max)80 V
Supplier Device PackageTO-92-3
Series-
Transistor TypePNP
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Power - Max900 mW
REACH StatusREACH Unaffected
MfrSTMicroelectronics
Current - Collector Cutoff (Max)1mA
HTSUS8541.21.0095
PackageBag
RoHS StatusROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A, 2V
Base Product NumberSTX817
Moisture Sensitivity Level (MSL)1 (Unlimited)

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