| Typical Input Capacitance @ Vds (pF) | 630@10V | |
| Category | Power MOSFET | |
| Configuration | Single | |
| PCB changed | 2 | |
| Maximum Gate Source Leakage Current (nA) | 10000 | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Typical Rise Time (ns) | 25 | |
| PPAP | No | |
| Maximum Power Dissipation (mW) | 20000 | |
| Channel Mode | Enhancement | |
| Automotive | No | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Package | New PW-Mold | |
| Maximum IDSS (uA) | 100 | |
| Typical Fall Time (ns) | 55 | |
| Process Technology | L2-pi-MOS V | |
| Package Height | 2.3 | |
| Channel Type | P | |
| EU RoHS | Supplier Unconfirmed | |
| Maximum Continuous Drain Current (A) | 5 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Drain Source Voltage (V) | 60 | |
| Maximum Drain Source Resistance (mOhm) | 190@10V | |
| Material | Si | |
| Package Length | 6.5 | |
| Typical Gate Charge @ 10V (nC) | 22 | |
| Standard Package Name | TO-251 | |
| Pin Count | 3 | |
| Mounting | Surface Mount | |
| Tab | Tab | |
| Lead Shape | Gull-wing | |
| Part Status | LTB | |
| Maximum Gate Threshold Voltage (V) | 2 | |
| Package Width | 5.5 | |
| Typical Gate Charge @ Vgs (nC) | 22@10V | |
