| Typical Input Capacitance @ Vds (pF) | 2300@10V | |
| Category | Power MOSFET | |
| Configuration | Single | |
| PCB changed | 3 | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Typical Rise Time (ns) | 70 | |
| PPAP | No | |
| Maximum Power Dissipation (mW) | 150000 | |
| Channel Mode | Enhancement | |
| Automotive | No | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Package | TO-3P | |
| Typical Fall Time (ns) | 75 | |
| Process Technology | pi-MOS I | |
| Package Height | 5.2 | |
| Channel Type | N | |
| EU RoHS | Supplier Unconfirmed | |
| Maximum Continuous Drain Current (A) | 15 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Drain Source Voltage (V) | 500 | |
| Material | Si | |
| Package Length | 20.5 | |
| Typical Gate Charge @ 10V (nC) | 87 | |
| Standard Package Name | TO | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Tab | Tab | |
| Lead Shape | Through Hole | |
| Part Status | Obsolete | |
| Package Width | 26 | |
| Maximum Drain Source Resistance (MOhm) | 400@10V | |
| Typical Gate Charge @ Vgs (nC) | 87@10V |
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