| Unit Weight | 0.000282 oz | |
| Configuration | Single | |
| Id - Continuous Drain Current | 115 mA | |
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | |
| Channel Mode | Enhancement | |
| Product Status | Active | |
| RoHS | RoHS Compliant | |
| Qg - Gate Charge | - | |
| Supplier Device Package | TO-236 | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Power Dissipation (Max) | 200mW (Ta) | |
| Transistor Type | 1 N-Channel | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Channels | 1 Channel | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Vishay Siliconix | |
| Vgs (Max) | ±20V | |
| Height | 1.45 mm | |
| Maximum Operating Temperature | + 150 C | |
| Width | 1.6 mm | |
| Rds On - Drain-Source Resistance | 7.5 Ohms | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Style | SMD/SMT | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| ECCN | EAR99 | |
| Transistor Polarity | N-Channel | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Minimum Operating Temperature | - 55 C | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Series | 2N700/2N7002 | |
| Length | 2.9 mm | |
| Forward Transconductance - Min | 80 mS | |
| Current - Continuous Drain (Id) @ 25°C | 115mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
| Vgs th - Gate-Source Threshold Voltage | 1 V | |
| HTSUS | 8541.21.0095 | |
| Package | Tape & Reel (TR) | |
| Pd - Power Dissipation | 200 mW | |
| USHTS | 8541210095 | |
| Base Product Number | 2N7002 | |
