| Typical Input Capacitance @ Vds (pF) | 30@25V | |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.35 | |
| Category | Power MOSFET | |
| Configuration | Single | |
| PCB changed | 3 | |
| Typical Turn-Off Delay Time (ns) | 35(Max) | |
| HTS | COMPONENTS | |
| Maximum Gate Source Leakage Current (nA) | 150 | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| PPAP | No | |
| Maximum Power Dissipation (mW) | 350 | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 25(Max) | |
| Automotive | No | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Package | SOT-23 | |
| Maximum IDSS (uA) | 1 | |
| Process Technology | TrenchFET | |
| Package Height | 1.02(Max) | |
| Maximum Positive Gate Source Voltage (V) | 20 | |
| Channel Type | N | |
| Typical Drain Source Resistance @ 25°C (mOhm) | 2100@4V|1300@6V|1100@8V|1000@10V | |
| EU RoHS | Compliant | |
| Maximum Continuous Drain Current (A) | 0.3 | |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.8 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Drain Source Voltage (V) | 60 | |
| Maximum Drain Source Resistance (mOhm) | 2000@10V | |
| Typical Gate Plateau Voltage (V) | 3.1 | |
| Package Length | 3.04(Max) | |
| Standard Package Name | SOT | |
| Maximum Diode Forward Voltage (V) | 1.3 | |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.3 | |
| Pin Count | 3 | |
| Mounting | Surface Mount | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Typical Output Capacitance (pF) | 6 | |
| Minimum Gate Threshold Voltage (V) | 1 | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.5@25V | |
| Lead Shape | Gull-wing | |
| Part Status | NRND | |
| Maximum Gate Threshold Voltage (V) | 2.5 | |
| Package | Tape and Reel | |
| Package Width | 1.4(Max) | |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 350 | |
| Typical Gate Charge @ Vgs (nC) | [email protected] | |
