BPV11F
Phototransistors Manufacturer:
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Description:
BPV11F
544-BPV11F
Phototransistor IR Chip Silicon 930nm 2-Pin T-1 3/4
Technical specifications
| Number of Channels per Chip | 1 | |
| Unit Weight | 0.014110 oz | |
| Fabrication Technology | NPN Transistor | |
| Light Current | 9 mA | |
| Product | Phototransistors | |
| PPAP | No | |
| RoHS | RoHS Compliant | |
| Automotive | No | |
| Supplier Package | T-1 3/4 | |
| Package / Case | T-1 3/4 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 | |
| Lens Shape Type | Domed | |
| EU RoHS | Compliant | |
| Peak Wavelength | 930 nm | |
| Collector-Emitter Breakdown Voltage | 70 V | |
| Maximum Collector Current (mA) | 50 | |
| ECCN | EAR99 | |
| Wavelength | 930 nm | |
| Pin Count | 2 | |
| Mounting | Through Hole | |
| Lens Color/Style | Water Clear | |
| Viewing Orientation | Top View | |
| Lead Shape | Through Hole | |
| Peak Wavelength (nm) | 930 | |
| Collector- Emitter Voltage VCEO Max | 70 V | |
| Package | Tube | |
| USHTS | 8541497080 | |
| Maximum Light Current (uA) | 9000(Typ) | |
| Maximum On-State Collector Current | 50 mA | |
| PCB changed | 2 | |
| HTS | 8541.49.80.00 | |
| Maximum Collector-Emitter Voltage (V) | 70 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 150 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 100 | |
| Phototransistor Type | Phototransistor | |
| Package Height | 8.6 | |
| Collector-Emitter Saturation Voltage | 130 mV | |
| Polarity | NPN | |
| Height | 8.6 mm | |
| Maximum Operating Temperature | + 100 C | |
| Maximum Dark Current (nA) | 50 | |
| Width | 5.75 mm | |
| Diameter | 5.75 | |
| Mounting Style | Through Hole | |
| Material | Silicon | |
| Minimum Operating Temperature | - 40 C | |
| Cut-Off Filter | Visible Cut-off | |
| Type | IR Chip | |
| Half Intensity Angle Degrees (°) | 30 | |
| Length | 5.75 mm | |
| Half Intensity Angle Degrees | 15 deg | |
| Part Status | Active | |
| Pd - Power Dissipation | 150 mW | |
| Dark Current | 50 nA |
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