BPW77NB

Manufacturer:
Mfr. Part #:
onzuu Part #:
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Description:
Vishay
BPW77NB
544-BPW77NB
Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA Bulk

Technical specifications

Number of Channels per Chip1
Unit Weight0.010582 oz
Fabrication TechnologyNPN Transistor
Light Current10 mA
ProductPhototransistors
PPAPNo
RoHSRoHS Compliant
AutomotiveNo
Supplier PackageTO-206AA
Package / CaseTO-18
Maximum Collector-Emitter Saturation Voltage (V)0.3
Lens Shape TypeDomed
EU RoHSCompliant
Peak Wavelength850 nm
Collector-Emitter Breakdown Voltage70 V
Maximum Collector Current (mA)50
ECCNEAR99
Standard Package NameTO
Wavelength850 nm
Pin Count3
MountingThrough Hole
Lens Color/StyleClear
Viewing OrientationTop View
Lead ShapeThrough Hole
Peak Wavelength (nm)850
Collector- Emitter Voltage VCEO Max70 V
PackageBulk
USHTS8541497080
Maximum Light Current (uA)20000(Typ)
Maximum On-State Collector Current50 mA
PCB changed3
HTSCOMPONENTS
Maximum Collector-Emitter Voltage (V)70
ECCN (US)EAR99
Maximum Power Dissipation (mW)250
Minimum Operating Temperature (°C)-40
Maximum Operating Temperature (°C)125
Phototransistor TypePhototransistor
Package Height6.15
Collector-Emitter Saturation Voltage150 mV
PolarityNPN
Height6.15 mm
Maximum Operating Temperature+ 125 C
Maximum Dark Current (nA)100
Width5.5 mm
Diameter5.5
Mounting StyleThrough Hole
MaterialSilicon
Minimum Operating Temperature- 40 C
TypeIR Chip
Half Intensity Angle Degrees (°)20
Length5.5 mm
Half Intensity Angle Degrees10 deg
Part StatusActive
Pd - Power Dissipation250 mW
Dark Current100 nA