Number of Channels per Chip | 1 | |
Unit Weight | 0.010582 oz | |
Fabrication Technology | NPN Transistor | |
Light Current | 10 mA | |
Product | Phototransistors | |
PPAP | No | |
RoHS | RoHS Compliant | |
Automotive | No | |
Supplier Package | TO-206AA | |
Package / Case | TO-18 | |
Maximum Collector-Emitter Saturation Voltage (V) | 0.3 | |
Lens Shape Type | Domed | |
EU RoHS | Compliant | |
Peak Wavelength | 850 nm | |
Collector-Emitter Breakdown Voltage | 70 V | |
Maximum Collector Current (mA) | 50 | |
ECCN | EAR99 | |
Standard Package Name | TO | |
Wavelength | 850 nm | |
Pin Count | 3 | |
Mounting | Through Hole | |
Lens Color/Style | Clear | |
Viewing Orientation | Top View | |
Lead Shape | Through Hole | |
Peak Wavelength (nm) | 850 | |
Collector- Emitter Voltage VCEO Max | 70 V | |
Package | Bulk | |
USHTS | 8541497080 | |
Maximum Light Current (uA) | 20000(Typ) | |
Maximum On-State Collector Current | 50 mA | |
PCB changed | 3 | |
HTS | COMPONENTS | |
Maximum Collector-Emitter Voltage (V) | 70 | |
ECCN (US) | EAR99 | |
Maximum Power Dissipation (mW) | 250 | |
Minimum Operating Temperature (°C) | -40 | |
Maximum Operating Temperature (°C) | 125 | |
Phototransistor Type | Phototransistor | |
Package Height | 6.15 | |
Collector-Emitter Saturation Voltage | 150 mV | |
Polarity | NPN | |
Height | 6.15 mm | |
Maximum Operating Temperature | + 125 C | |
Maximum Dark Current (nA) | 100 | |
Width | 5.5 mm | |
Diameter | 5.5 | |
Mounting Style | Through Hole | |
Material | Silicon | |
Minimum Operating Temperature | - 40 C | |
Type | IR Chip | |
Half Intensity Angle Degrees (°) | 20 | |
Length | 5.5 mm | |
Half Intensity Angle Degrees | 10 deg | |
Part Status | Active | |
Pd - Power Dissipation | 250 mW | |
Dark Current | 100 nA | |