BPW77NB
Phototransistors Manufacturer:
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Description:
BPW77NB
544-BPW77NB
Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA Bulk
Technical specifications
| Number of Channels per Chip | 1 | |
| Unit Weight | 0.010582 oz | |
| Fabrication Technology | NPN Transistor | |
| Light Current | 10 mA | |
| Product | Phototransistors | |
| PPAP | No | |
| RoHS | RoHS Compliant | |
| Automotive | No | |
| Supplier Package | TO-206AA | |
| Package / Case | TO-18 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 | |
| Lens Shape Type | Domed | |
| EU RoHS | Compliant | |
| Peak Wavelength | 850 nm | |
| Collector-Emitter Breakdown Voltage | 70 V | |
| Maximum Collector Current (mA) | 50 | |
| ECCN | EAR99 | |
| Standard Package Name | TO | |
| Wavelength | 850 nm | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Lens Color/Style | Clear | |
| Viewing Orientation | Top View | |
| Lead Shape | Through Hole | |
| Peak Wavelength (nm) | 850 | |
| Collector- Emitter Voltage VCEO Max | 70 V | |
| Package | Bulk | |
| USHTS | 8541497080 | |
| Maximum Light Current (uA) | 20000(Typ) | |
| Maximum On-State Collector Current | 50 mA | |
| PCB changed | 3 | |
| HTS | COMPONENTS | |
| Maximum Collector-Emitter Voltage (V) | 70 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 250 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 125 | |
| Phototransistor Type | Phototransistor | |
| Package Height | 6.15 | |
| Collector-Emitter Saturation Voltage | 150 mV | |
| Polarity | NPN | |
| Height | 6.15 mm | |
| Maximum Operating Temperature | + 125 C | |
| Maximum Dark Current (nA) | 100 | |
| Width | 5.5 mm | |
| Diameter | 5.5 | |
| Mounting Style | Through Hole | |
| Material | Silicon | |
| Minimum Operating Temperature | - 40 C | |
| Type | IR Chip | |
| Half Intensity Angle Degrees (°) | 20 | |
| Length | 5.5 mm | |
| Half Intensity Angle Degrees | 10 deg | |
| Part Status | Active | |
| Pd - Power Dissipation | 250 mW | |
| Dark Current | 100 nA |
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