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BYG23T-M3/TR (In Stock:130156)

Single Diodes
Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Vishay General Semiconductor – Diodes Division
BYG23T-M3/TR
280-BYG23T-M3/TR
Vishay General Semiconductor – Diodes Division-BYG23T-M3/TR-datasheets-2863191.pdf
DIODE AVALANCHE 1.3KV 1A DO214AC

Technical specifications

Unit Weight0.003880 oz
ConfigurationSingle
Reverse Recovery Time (trr)75 ns
ProductRectifiers
Product StatusActive
Ir - Reverse Current5 uA
RoHSRoHS Compliant
Supplier Device PackageDO-214AC (SMA)
Vf - Forward Voltage1.74 V
Vr - Reverse Voltage1.3 kV
Package / CaseDO-214AC, SMA
TechnologyAvalanche
REACH StatusREACH Unaffected
MfrVishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)1300 V
Maximum Operating Temperature+ 150 C
Recovery Time75 ns
If - Forward Current1 A
Current - Average Rectified (Io)1A
Operating Temperature - Junction-55°C ~ 150°C
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Mounting StyleSMD/SMT
SpeedFast Recovery =< 500ns, > 200mA (Io)
Max Surge Current18 A
Capacitance @ Vr, F9pF @ 4V, 1MHz
ECCNEAR99
Mounting TypeSurface Mount
Minimum Operating Temperature- 55 C
Current - Reverse Leakage @ Vr5 µA @ 1300 V
SeriesBYG23T-M3
TypeFast Recovery Rectifiers
Voltage - Forward (Vf) (Max) @ If1.9 V @ 1 A
HTSUS8541.10.0080
PackageTape & Reel (TR)
Pd - Power Dissipation-
USHTS8541100080
Base Product NumberBYG23

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