Number of Channels per Chip | 1 | |
Unit Weight | 0.085856 oz | |
PCB changed | 4 | |
HTS | 8541.49.80.00 | |
Output Type | Phototransistor | |
Sensing Distance | 0.2 mm to 15 mm | |
Maximum Collector-Emitter Voltage (V) | 70 | |
ECCN (US) | EAR99 | |
Maximum Collector Current | 100 mA | |
PPAP | No | |
Sensing Method | Reflective | |
Maximum Power Dissipation (mW) | 200 | |
RoHS | RoHS Compliant | |
Automotive | No | |
Minimum Operating Temperature (°C) | -25 | |
Maximum Operating Temperature (°C) | 85 | |
Vf - Forward Voltage | 1.25 V | |
Vr - Reverse Voltage | 5 V | |
Number of Channels | 1 Channel | |
Package Height | 4.7(Max) | |
Maximum Reverse Voltage (V) | 5 | |
Height | 7 mm | |
Maximum Operating Temperature | + 85 C | |
EU RoHS | Compliant | |
If - Forward Current | 60 mA | |
Maximum Forward Current (mA) | 60 | |
Width | 5.8 mm | |
Output Device | Phototransistor | |
Mounting Style | Through Hole | |
Maximum Collector Current (mA) | 100 | |
ECCN | EAR99 | |
Package Length | 9.39(Max) | |
Wavelength | 950 nm | |
Minimum Operating Temperature | - 25 C | |
Pin Count | 4 | |
Mounting | Through Hole | |
Type | Reflective | |
Length | 10.2 mm | |
Part Status | Active | |
Peak Wavelength (nm) | 940(Min) | |
Collector- Emitter Voltage VCEO Max | 70 V | |
Package | Tube | |
Package Width | 9.39(Max) | |
Pd - Power Dissipation | 200 mW | |
USHTS | 8541498000 | |