TEMT1000

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Mfr. Part #:
onzuu Part #:
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Description:
Vishay
TEMT1000
544-TEMT1000
Phototransistor IR Chip Silicon 950nm 2-Pin SMD T/R

Technical specifications

Number of Channels per Chip1
Unit Weight0.007729 oz
Fabrication TechnologyNPN Transistor
Light Current7 mA
ProductPhototransistors
PPAPNo
Fall Time2.3 us
RoHSRoHS Compliant
AutomotiveNo
Supplier PackageSMD
Package / CaseSMD-2
Maximum Collector-Emitter Saturation Voltage (V)0.3
Lens Shape TypeDomed
EU RoHSCompliant
Peak Wavelength950 nm
Collector-Emitter Breakdown Voltage70 V
Maximum Collector Current (mA)50
ECCNEAR99
Standard Package NameSMD
Wavelength880 nm
Maximum Emitter-Collector Voltage (V)5
Pin Count2
MountingSurface Mount
Lens Color/StyleBlack
Rise Time2 us
Moisture SensitiveYes
Viewing OrientationTop View
Peak Wavelength (nm)950
Collector- Emitter Voltage VCEO Max70 V
PackageTape and Reel
USHTS8541497080
Maximum Light Current (uA)7000(Typ)
Maximum On-State Collector Current100 mA
PCB changed2
HTS8541.49.70.80
Maximum Collector-Emitter Voltage (V)70(Min)
ECCN (US)EAR99
Maximum Power Dissipation (mW)100
Minimum Operating Temperature (°C)-40
Maximum Operating Temperature (°C)85
Phototransistor TypePhototransistor
Package Height2.7
Collector-Emitter Saturation Voltage300 mV
PolarityNPN
Height2.7 mm
Maximum Operating Temperature+ 85 C
Maximum Dark Current (nA)200
Width2 mm
Mounting StyleSMD/SMT
MaterialSilicon
Package Length2.5
Minimum Operating Temperature- 40 C
Cut-Off FilterVisible Cut-off
SeriesTEMT
TypeIR Chip
Half Intensity Angle Degrees (°)30
Length2.5 mm
Half Intensity Angle Degrees15 deg
Part StatusActive
Package Width2
Pd - Power Dissipation100 mW
Dark Current200 nA