| Number of Channels per Chip | 1 | |
| Unit Weight | 0.002264 oz | |
| Fabrication Technology | NPN Transistor | |
| Light Current | 6 mA | |
| Product | Phototransistors | |
| PPAP | Unknown | |
| RoHS | RoHS Compliant | |
| Automotive | Yes | |
| Supplier Package | SMD | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 | |
| Lens Shape Type | Domed | |
| EU RoHS | Compliant | |
| Peak Wavelength | 860 nm | |
| Collector-Emitter Breakdown Voltage | 20 V | |
| Maximum Collector Current (mA) | 50 | |
| ECCN | EAR99 | |
| Standard Package Name | SMD | |
| Wavelength | 860 nm | |
| Maximum Emitter-Collector Voltage (V) | 7 | |
| Pin Count | 2 | |
| Mounting | Surface Mount | |
| Qualification | AEC-Q100 | |
| Moisture Sensitive | Yes | |
| Viewing Orientation | Top View | |
| Peak Wavelength (nm) | 860 | |
| Collector- Emitter Voltage VCEO Max | 20 V | |
| Package | Tape and Reel | |
| Lens Color | Black | |
| USHTS | 8541497080 | |
| Maximum Light Current (uA) | 9000 | |
| Maximum On-State Collector Current | 50 mA | |
| PCB changed | 2 | |
| HTS | 8541.49.70.80 | |
| Maximum Collector-Emitter Voltage (V) | 20 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 100 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 100 | |
| Phototransistor Type | Phototransistor | |
| Package Height | 2.77 | |
| Collector-Emitter Saturation Voltage | 400 mV | |
| Polarity | NPN | |
| Maximum Operating Temperature | + 100 C | |
| Maximum Dark Current (nA) | 100 | |
| Mounting Style | SMD/SMT | |
| Material | Silicon | |
| Package Length | 2.3 | |
| Minimum Operating Temperature | - 40 C | |
| Series | VEMT | |
| Type | IR Chip | |
| Half Intensity Angle Degrees (°) | 30 | |
| Half Intensity Angle Degrees | 15 deg | |
| Part Status | Active | |
| Package Width | 2.3 | |
| Pd - Power Dissipation | 100 mW | |
| Dark Current | 100 nA | |
