VEMT3700F-GS08

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Mfr. Part #:
onzuu Part #:
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Description:
Vishay
VEMT3700F-GS08
544-VEMT3700F-GS08
Phototransistor IR Chip Silicon 940nm 2-Pin PLCC T/R

Technical specifications

Number of Channels per Chip1
Unit Weight0.434810 oz
Fabrication TechnologyNPN Transistor
Light Current500 uA
ProductPhototransistors
PPAPNo
Fall Time2 us
RoHSRoHS Compliant
AutomotiveNo
Supplier PackagePLCC
Package / CasePLCC-2
Maximum Collector-Emitter Saturation Voltage (V)0.3
Lens Shape TypeFlat
EU RoHSCompliant
Peak Wavelength850 nm
Collector-Emitter Breakdown Voltage70 V
Maximum Collector Current (mA)50
Maximum Fall Time (ns)6000(Typ)
ECCNEAR99
Standard Package NameLCC
Wavelength940 nm
Maximum Emitter-Collector Voltage (V)5
Pin Count2
MountingSurface Mount
Rise Time6 us
Moisture SensitiveYes
Viewing OrientationTop View
Lead ShapeJ-Lead
Peak Wavelength (nm)940
Collector- Emitter Voltage VCEO Max70 V
PackageTape and Reel
USHTS8541498000
Maximum Light Current (uA)5000
Maximum On-State Collector Current50 mA
PCB changed2
HTS8541.49.70.80
Maximum Collector-Emitter Voltage (V)70
ECCN (US)EAR99
Maximum Power Dissipation (mW)100
Minimum Operating Temperature (°C)-40
Maximum Operating Temperature (°C)100
Phototransistor TypePhototransistor
Collector-Emitter Saturation Voltage150 mV
PolarityNPN
Maximum Operating Temperature+ 100 C
Maximum Dark Current (nA)200
Maximum Rise Time (ns)6000(Typ)
MaterialSilicon
Package Length3
Minimum Operating Temperature- 40 C
SeriesVEMT
TypeIR Chip
Half Intensity Angle Degrees (°)120
Half Intensity Angle Degrees60 deg
Part StatusActive
Package Width2.8
Pd - Power Dissipation100 mW
Dark Current200 nA