Number of Channels per Chip | 1 | |
Unit Weight | 0.434810 oz | |
Fabrication Technology | NPN Transistor | |
Light Current | 500 uA | |
Product | Phototransistors | |
PPAP | No | |
Fall Time | 2 us | |
RoHS | RoHS Compliant | |
Automotive | No | |
Supplier Package | PLCC | |
Package / Case | PLCC-2 | |
Maximum Collector-Emitter Saturation Voltage (V) | 0.3 | |
Lens Shape Type | Flat | |
EU RoHS | Compliant | |
Peak Wavelength | 850 nm | |
Collector-Emitter Breakdown Voltage | 70 V | |
Maximum Collector Current (mA) | 50 | |
Maximum Fall Time (ns) | 6000(Typ) | |
ECCN | EAR99 | |
Standard Package Name | LCC | |
Wavelength | 940 nm | |
Maximum Emitter-Collector Voltage (V) | 5 | |
Pin Count | 2 | |
Mounting | Surface Mount | |
Rise Time | 6 us | |
Moisture Sensitive | Yes | |
Viewing Orientation | Top View | |
Lead Shape | J-Lead | |
Peak Wavelength (nm) | 940 | |
Collector- Emitter Voltage VCEO Max | 70 V | |
Package | Tape and Reel | |
USHTS | 8541498000 | |
Maximum Light Current (uA) | 5000 | |
Maximum On-State Collector Current | 50 mA | |
PCB changed | 2 | |
HTS | 8541.49.70.80 | |
Maximum Collector-Emitter Voltage (V) | 70 | |
ECCN (US) | EAR99 | |
Maximum Power Dissipation (mW) | 100 | |
Minimum Operating Temperature (°C) | -40 | |
Maximum Operating Temperature (°C) | 100 | |
Phototransistor Type | Phototransistor | |
Collector-Emitter Saturation Voltage | 150 mV | |
Polarity | NPN | |
Maximum Operating Temperature | + 100 C | |
Maximum Dark Current (nA) | 200 | |
Maximum Rise Time (ns) | 6000(Typ) | |
Material | Silicon | |
Package Length | 3 | |
Minimum Operating Temperature | - 40 C | |
Series | VEMT | |
Type | IR Chip | |
Half Intensity Angle Degrees (°) | 120 | |
Half Intensity Angle Degrees | 60 deg | |
Part Status | Active | |
Package Width | 2.8 | |
Pd - Power Dissipation | 100 mW | |
Dark Current | 200 nA | |