| Configuration | Non-Inverting | |
| Product | IGBT, MOSFET Gate Drivers | |
| Fall Time | 100 ns | |
| Input Voltage - Max | 32 V | |
| RoHS | RoHS Compliant | |
| Supply Voltage - Min | 15 V | |
| Vf - Forward Voltage | 1.6 V | |
| Input Voltage - Min | 15 V | |
| Vr - Reverse Voltage | 5 V | |
| Operating Supply Current | 2.5 mA | |
| Package / Case | DIP-8 | |
| Number of Channels | 1 Channel | |
| Technology | Si | |
| Maximum Operating Temperature | + 110 C | |
| If - Forward Current | 25 mA | |
| Supply Voltage - Max | 32 V | |
| Mounting Style | Through Hole | |
| Isolation Voltage | 5300 Vrms | |
| Output Current | 2.5 A | |
| ECCN | EAR99 | |
| Number of Drivers | 1 Driver | |
| Minimum Operating Temperature | - 40 C | |
| Number of Outputs | 1 Output | |
| Type | IGBT | |
| Rise Time | 100 ns | |
| Shutdown | No Shutdown | |
| Package | Tube | |
| Pd - Power Dissipation | 295 mW | |
| USHTS | 8541498000 | |
| Output Voltage | 500 mV |
