IPI030N10N3GXKSA1

Single FETs, MOSFETs
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Mfr. Part #:
onzuu Part #:
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Description:
IPI030N10N3GXKSA1
278-IPI030N10N3GXKSA1
MOSFET N-CH 100V 100A TO262-3

IPI030N10N3GXKSA1 Description

N-Channel 100 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds14800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs206 nC @ 10 V
Product StatusObsolete
Supplier Device PackagePG-TO262-3
Drain to Source Voltage (Vdss)100 V
Power Dissipation (Max)300W (Tc)
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrInfineon Technologies
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 275µA
SeriesOptiMOS™
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
HTSUS8541.29.0095
PackageTube
Base Product NumberIPI030

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