SI2333-TP
Single FETs, MOSFETs Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
SI2333-TP
278-SI2333-TP
MOSFET P-CH 12V 6A SOT23
Technical specifications
| Unit Weight | 0.000282 oz | |
| Configuration | Single | |
| Typical Turn-Off Delay Time (ns) | 52 | |
| Id - Continuous Drain Current | 6 A | |
| Input Capacitance (Ciss) (Max) @ Vds | 1275 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V | |
| Typical Rise Time (ns) | 5.4 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 7.1 | |
| Fall Time | 3 ns | |
| Product Status | Active | |
| RoHS | RoHS Compliant | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 12 V | |
| Supplier Package | SOT-23 | |
| Transistor Type | 1 P-Channel | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Channels | 1 Channel | |
| Typical Turn-On Delay Time | 4 ns | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | P | |
| EU RoHS | Compliant | |
| Rds On - Drain-Source Resistance | 28 mOhms | |
| Maximum Continuous Drain Current (A) | 6 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Maximum Drain Source Voltage (V) | 12 | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Standard Package Name | SOT | |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 500mA, 1.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Pin Count | 3 | |
| Mounting | Surface Mount | |
| Rise Time | 4 ns | |
| Lead Shape | Gull-wing | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V | |
| Vgs th - Gate-Source Threshold Voltage | 1 V | |
| HTSUS | 8541.21.0095 | |
| Package | Tape & Reel (TR) | |
| Maximum Drain Source Resistance (MOhm) | [email protected] | |
| USHTS | 8541290095 | |
| Typical Gate Charge @ Vgs (nC) | [email protected] | |
| Typical Input Capacitance @ Vds (pF) | 810@6V | |
| Category | Power MOSFET | |
| PCB changed | 3 | |
| HTS | 8541.29.00.95 | |
| FET Type | P-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 1100 | |
| Qg - Gate Charge | 14 nC | |
| Supplier Device Package | SOT-23 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Power Dissipation (Max) | 350mW (Tc) | |
| Typical Fall Time (ns) | 26 | |
| Process Technology | TrenchFET | |
| Package Height | 1.1(Max) | |
| Mfr | Micro Commercial Co | |
| Vgs (Max) | ±8V | |
| Maximum Operating Temperature | + 150 C | |
| RoHS Status | ROHS3 Compliant | |
| Mounting Style | SMD/SMT | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±8 | |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | |
| Typical Turn-Off Delay Time | 7 ns | |
| Transistor Polarity | P-Channel | |
| Package Length | 3.04(Max) | |
| Minimum Operating Temperature | - 55 C | |
| Vds - Drain-Source Breakdown Voltage | 12 V | |
| Series | SI2333 | |
| Forward Transconductance - Min | 18 S | |
| Part Status | Active | |
| Package Width | 1.4(Max) | |
| Pd - Power Dissipation | 1.1 W | |
| Base Product Number | SI2333 |
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