EMD6FHAT2R

Bipolar Transistor Arrays, Pre-Biased
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EMD6FHAT2R
293-EMD6FHAT2R
PNP+NPN DIGITAL TRANSISTOR (CORR

EMD6FHAT2R Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Technical specifications

Resistor - Base (R1)4.7kOhms
Product StatusNot For New Designs
Voltage - Collector Emitter Breakdown (Max)50V
Supplier Device PackageEMT6
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Package / CaseSOT-563, SOT-666
REACH StatusREACH Unaffected
MfrRohm Semiconductor
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Frequency - Transition250MHz
Current - Collector (Ic) (Max)100mA
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
ECCNEAR99
GradeAutomotive
Mounting TypeSurface Mount
Series-
QualificationAEC-Q101
Power - Max150mW
Resistor - Emitter Base (R2)-
Current - Collector Cutoff (Max)500nA (ICBO)
HTSUS8541.21.0075
PackageTape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Base Product NumberEMD6FHAT2

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