STP65NF06 (In Stock:6819)
Single FETs, MOSFETs Manufacturer:
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onzuu Part #:
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Description:
STP65NF06
278-STP65NF06
MOSFET N-CH 60V 60A TO220AB
STP65NF06 Description
STP65NF06 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including power electronics, motor control, and automotive systems.
### Description:
The STP65NF06 is an N-channel enhancement mode field-effect transistor (FET) with a voltage rating of 60V and a continuous drain current (ID) of 65A. It features a low on-state resistance (RDS(on)) of 0.07 Ohms (maximum) at a gate-source voltage (VGS) of 10V, which helps to minimize power dissipation and improve efficiency.
### Features:
1. High voltage rating: 60V
2. High continuous drain current: 65A
3. Low on-state resistance: 0.07 Ohms (maximum) at VGS = 10V
4. Enhancement mode operation
5. Suitable for a wide range of applications, including power electronics, motor control, and automotive systems
### Applications:
1. Power electronics: The STP65NF06 can be used in power supply circuits, power converters, and other power management applications due to its high voltage and current ratings.
2. Motor control: The MOSFET's high current capability and low on-state resistance make it suitable for use in motor control applications, such as driving brushless DC motors and stepper motors.
3. Automotive systems: The STP65NF06 can be used in various automotive applications, including electric power steering, window lift systems, and cooling fan control.
4. Industrial control: The MOSFET can be used in industrial control systems, such as conveyor motor control and robotic actuator control, where high current and voltage ratings are required.
5. Renewable energy systems: The STP65NF06 can be used in solar panel systems, wind turbines, and other renewable energy applications for power management and motor control.
In summary, the STP65NF06 is a high voltage, high current N-channel MOSFET transistor from STMicroelectronics that offers low on-state resistance and is suitable for a wide range of applications, including power electronics, motor control, automotive systems, industrial control, and renewable energy systems.
Technical specifications
| Configuration | Single | |
| Typical Turn-Off Delay Time (ns) | 40 | |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | |
| Typical Rise Time (ns) | 60 | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Typical Turn-On Delay Time (ns) | 15 | |
| Product Status | Obsolete | |
| Automotive | No | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Supplier Package | TO-220AB | |
| Package / Case | TO-220-3 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Channel Type | N | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 60 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Maximum Drain Source Voltage (V) | 60 | |
| Maximum Drain Source Resistance (mOhm) | 14@10V | |
| ECCN | EAR99 | |
| Supplier Temperature Grade | Industrial | |
| Mounting Type | Through Hole | |
| Standard Package Name | TO | |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Pin Count | 3 | |
| Mounting | Through Hole | |
| Lead Shape | Through Hole | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| SVHC | Yes | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Typical Gate Charge @ Vgs (nC) | 54@10V | |
| Typical Input Capacitance @ Vds (pF) | 1700@25V | |
| Category | Power MOSFET | |
| PCB changed | 3 | |
| HTS | 8541.21.00.95 | |
| FET Type | N-Channel | |
| Number of Elements per Chip | 1 | |
| ECCN (US) | EAR99 | |
| Maximum Power Dissipation (mW) | 110000 | |
| Supplier Device Package | TO-220 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 175 | |
| Power Dissipation (Max) | 110W (Tc) | |
| Typical Fall Time (ns) | 16 | |
| Process Technology | STripFET II | |
| Package Height | 9.15(Max) | |
| Mfr | STMicroelectronics | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| FET Feature | - | |
| Maximum Gate Source Voltage (V) | ±20 | |
| SVHC Exceeds Threshold | Yes | |
| Package Length | 10.4(Max) | |
| Typical Gate Charge @ 10V (nC) | 54 | |
| Series | STripFET™ II | |
| Tab | Tab | |
| Part Status | Active | |
| Package Width | 4.6(Max) | |
| Base Product Number | STP65N |
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